GOLETA, Calif.—Transphorm Inc. announced availability of its third-generation (Gen III) 650-volt (V) GaN FETs. Power transistors built on Gen III technology yield lower electromagnetic interference (EMI), increased gate noise immunity, and greater headroom in circuit applications.
TP65H035WS, TP65H050WS, TP90H180PS, TPH3205WSBQA, Transphorm Inc, datasheet search, Transphorm Inc, datasheets, Datasheet search site for Electronic Components. The reference design delivers 99 percent efficiency using Transphorm’s 3 rd generation 650 V GaN FET technology (TP65H050WS – 50 mΩ on-resistance) in an industry-preferred, robust TO-247 power.
The latest evolution of the award-winning platform stems from knowledge gained by the Transphorm team working with customers on end product designs now in production or soon to be released. Gen III devices being released include the TP65H050WS 50 mΩ FET and TP65H035WS 35 mΩ FET, both available in standard TO-247 packages.
Transphorm in the Field = Product Development Advantages
Transphorm is one of the only GaN semiconductor companies owning each critical stage of FET development. Given this, insight gained during customer development projects along with Gen I and Gen II platforms can be applied to the GaN-on-Si technology to increase the transistor’s quality, reliability, and performance. Data is often gathered that also informs development techniques that can simplify design complexity, increase safety margin, and/or positively affect power system performance.
Research that lead to Gen III produced both opportunities: increased benefits now inherent to the GaN technology itself and new design methods augmenting the FET’s performance. Further, the design and fabrication innovations enable Transphorm to reduce device price, generating even more ROI.
Technologically, the incorporation of a new MOSFET along with other design modifications enable Gen III devices to deliver:
Tp65h050ws
· An increased threshold voltage (noise immunity) to 4 V from 2.1 V for Gen II, eliminating the need for a negative gate drive.
· A gate reliability rating of ±20 V; an11 percent increase versus Gen II.
As a result, switching is quieter, and the platform delivers performance improvement at higher current levels with simple external circuitry.
Regarding learned design techniques, Transphorm published elegant solutions for oscillation suppression in its app note 0009: Recommended External Circuitry for Transphorm GaN FETs. Example recommendations include the use of DC-link RC snubbers and switching-node RC snubbers that add further stability without adverse impact on efficiency. Notably, the solutions can benefit half-bridge and bridgeless totem-pole PFC topologies.
Gen III 650 V Product Line Details
Availability: Currently shipping
· TP65H050WS 50 mΩ TO-247 unit price: 8.86 USD (sold in 1000 unit quantities)
· TP65H035WS 35 mΩ TO-247 unit price: 11.55 USD (sold in 1000 unit quantities)
Optimal output ratings: 1.5 kW to 5.0 kW applications depending on design criteria
Application markets:
· Broad industrial
· Data centers
· Merchant power supplies
Tp65h050wsqa
· Renewables
Supporting design resources:
· Datasheet
· Evaluation kit
· SPICE model
· Quality white paper
Website: transphormusa.com
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc. today released the first complete 3.3-kilowatt (kW) continuous conduction mode (CCM) bridgeless totem-pole power factor correction (PFC) reference design for high-voltage (HV) Gallium Nitride (GaN) power systems. The technical blueprint is used to develop AC to DC applications:
- High-end front-end PFCs for merchant power supplies (servers, gaming, crypto mining, and similar multi-kW high density applications)
- On-board chargers for plug in hybrid (PHEV) and battery electric vehicles (BEV)
- Broad industrial power supplies
Download the TDTTP3300-RD reference design here.
High efficiency products, minimal expertise required
Transphorm designs and manufactures the highest quality, highest reliability 650 V GaN platform, yielding the only JEDEC and AEC-Q101 HV GaN transistors. The reference design delivers 99 percent efficiency using Transphorm’s 3rd generation 650 V GaN FET technology (TP65H050WS – 50 mΩ on-resistance) in an industry-preferred, robust TO-247 power package.
The TDTTP3300-RD includes all the resources required to develop products quickly without the need for deep GaN design or DSP firmware coding expertise:
- Test report
- Hardware design guide
- Firmware design guide (with downloadable firmware)
- Design schematics and Gerber files
- Bill of materials (BOM)
“As demonstrated by customer end products, Transphorm’s high Q+R devices are proven to deliver what high-voltage GaN has always promised. Increased power density, efficiency, and performance with reduced system cost,” said Philip Zuk, Vice President of Technical Marketing, Transphorm. “Now, we are helping designers quickly capitalize on those benefits by eliminating design knowledge gaps. With our 3.3-kW reference design, we’re arming the industry with a roadmap that was several years in the making. We are excited to see what system innovations will be built upon this GaN foundation.”
Tp65h050ws Pdf
| TDTTP3300-RD Feature | Benefit |
| TP65H050WS GaN FET | High gate robustness: ±20 VGS(max) High noise immunity: 4.0 VTH |
| DSP firmware-based state machine | Enables a fully-functional converter with pre-defined operational states. |
| TMS320F28335 DSP motherboard integration | Well-known development tools |
| Programmable operational parameters | User-defined switching frequency, soft-start, fault limits, etc. |
| Fault processing | VIN/VOUT overvoltage, OCP, OTP, latch-off or programmable restart timers, etc. |
| Internal auxiliary power supply | Eliminates external supply, provides second-stage power. |
| Applied electromagnetic interference controls | Initial EMI standard achieved via circuit board layout and proven design techniques. |
Welcome to the GaN Revolution!
Transphorm designs, manufactures, and sells the highest performance, highest reliability GaN semiconductors for high-voltage power conversion applications. Holding one of the largest Power GaN IP portfolios (1000+ issued and pending patents worldwide), Transphorm produces the industry’s only JEDEC and AEC-Q101 qualified GaN FETs. This is due to a vertically-integrated business approach, which allows for innovation at every stage: materials and device design and manufacture, fabrication, packaging, reference circuit designs, and application support. Transphorm: moving power electronics beyond Silicon limits. Website: transphormusa.com Twitter: @transphormusa